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Cluster MBE (Molecular Beam Epitaxy) System

1.Cluster MBE ( 3 x Riber compact 21 MBE + 1 Ebeam + 1 Sputter), In/Ga/Al/As/P/Sb + Metal 2.Mini Cluster MBE ( 2 x VG 80 MBE system), In/Ga/Al/As/P 3.Veeco 930 MBE ( x1 ) In/Ga/Al/As + C doping 4.Home-made MBE ( x1 ) Ga/Al/N

Dedicated to 3-5 based 3D/2D/1D/0D nano-structures and their application to optical/electrical/noble physics including low density In(Ga)As QDs, GaAs droplet QDs High electron/home mobility transistors with GaAs, InGaAs/InAlAs, InAs/AlSb, InSb/InAlSb 2DEGs or 2DHGs Laser diodes & superluminescence diodes (InAs QDs, InGaAs/In(Ga)AlAs MQWs, GaAs/AlGaAs MQWs, InGaP/InGaAlP MQWs, GaSb/AlSb MQWs, 0.6 ~ 2um) Photodetectors (InGaAs, InAlSb, InSb, InAsSb, InAs bulk, InGaAs/In(Ga)AlAs MQWs, InAs/(Al)GaSb type-2 MQWs) Long wavelength laser and detectors (QWIP, QDIP, QCL etc.) Nano wires (GaAs, InAs, InP, InSb and their compounds) Solar cell Si-based 3-5 material growth

Contact point: Dr. Jindong Song,

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